South Korean tech giant Samsung has unveiled the company's first 8GB LPDDR4 DRAM memory module. This new memory module uses the latest 10nm semiconductor fabrication process which allowed the manufacturer to squeeze more transistors into it.

Through this new 10nm process, Samsung can create more power-efficient memory modules while doubling the capacity of the older 20nm memory modules. The new 8GB memory module operates at speeds up to 4,266Mbps. That is twice the speed of DDR4 memory modules designed for desktop computers which usually runs at 2,133Mbps.

Like Us on Facebook

Samsung said that this new memory module meets the required form factor for small devices such as smartphones. The company added that the memory module could also be used for tablets. Although some tablets, due to their bigger build, already ship with 8GB of memory, Samsung said that these devices could receive a boost when they are fitted with LPDDR4 modules.

In a statement, Samsung vice president Joo Sun Choi said, "The advent of our powerful 8GB mobile DRAM solution will enable more capable next-generation, flagship mobile devices around the world."

Aside from memory modules, Samsung also announced that the company is planning to use this new 10nm fabrication process in manufacturing new system-on-chip (SoC). Chipsets fabricated using the 10nm process will be used on devices that are to be launched early next year. There are rumors that the Samsung Galaxy S8 will be the first device to use a chipset manufactured using the 10nm process.

TagsSamsung, samsung memory, lpddr4, 10nm process, smartphone memory